منابع مشابه
A Ballistic Transport Model for HEMTs and III-V MOSFETs
As silicon MOSFETs keep scaling down in size, the continued improvement on their logic performance is threated by their fundamental physical limits. With silicon approaching these limits, MOSFETs designed with III-V semiconductors have emerged as promising candidates to replace them. The low-effective mass of various III-V materials such as InGaAs and InAs allow both faster and more power effic...
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The compound semiconductor channel materials have recently drawn great attention because of their potential to solve the upcoming Si MOSFETs scaling problem and become the next generation high-speed, low-power devices. In this work we review the latest silicon technology and report the process development of submicron III-V MOSFETs. A new approach has been demonstrated to overcome the high inte...
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In this talk, I discuss the new physics and device applications provided by self-assembled quantum dots, in particular, with III-V compound semiconductor materials system. The quantum dots are the structures three-dimensionally confined and therefore provide quasi zero-dimensional electron gas system, where novel physics can be studied and improved device performance can be achieved, in particu...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 2001
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(01)89004-9